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with A according to (5.96) and an arbitrary matrix D is considered. Using the properties of the pseudoinverse, we derive from (5.97) and (5.86):

an SNOS device and if the gate electrode is composed of metal rather than polysilicon, the structure is referred to as an MNOS device The total thickness of the gate insulator stack is such that a field-controlled charge transport mechanism, modified Fowler-Nordheim tunneling, allows the injection of charge into the insulators Some of the injected charge passes through the insulators, and the remainder of the injected charge is trapped in the silicon nitride layer This trapped charge in the gate dielectric causes the threshold voltage of the device to shift similar to that in the case of a floating gate device To erase the device, a voltage of the opposite polarity is applied across the insulator stack and the trapped charge is ejected back into the silicon or charge of opposite polarity is injected into the insulator stack.

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The fact that he has turned on her only makes matters worse, and that is what prompted her call to the counseling center Almost every relationship has problems, but we can imagine that Sheila s are probably more chronic than most, with themes of crisis and betrayal that are repeated again and again Indeed, this is one of the defining characteristics of personality disorder..

(Lave and Wenger, 1991: 96)

The voltage difference between the most positive threshold voltage and the most negative threshold voltage for a given programming voltage and time is referred to as the memory window To read the logic state of a silicon nitride device, a voltage between the most positive and most negative threshold voltages (within the memory window) is applied to the gate Sensing circuitry senses whether the channel of the silicon nitride device conducts or is turned off The read cycle is nondestructive because the state of the silicon nitride device is not changed during the read cycle In silicon nitride devices, the charge is stored in traps within an insulator, whereas in floating-gate devices, the charge is stored on a conductor (the floating gate) embedded within insulators A floating gate device need be programmed only at a corner or edge of the floating gate since the charge spreads across the conductor.

However, the silicon nitride device must be programmed with a voltage applied across the entire channel region of the device This is a major disadvantage of the silicon nitride technology However, lower programming voltages are possible with silicon nitride devices compared to those for floating gate devices Once the device is programmed by injecting charge into the gate insulator stack, the shifted threshold voltage of the device is empirically observed to decay with a dependence approximately linear in log time While originally treated as a disadvantage of silicon nitride devices, this gradual decay of threshold voltage has been used as a nondestructive electric screen to discard memories with defective memory cells This screening results in high levels of reliability for silicon nitride nonvolatile memories..

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